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| IDC28D120T6M Diode EMCON 4 Medium Power Chip FEATURES: * 1200V EMCON 4 technology * soft, fast switching * low reverse recovery charge * small temperature coefficient A This chip is used for: * low / medium power modules C Applications: * low / medium power drives Chip Type IDC28D120T6M VR 1200V IF 50A Die Size 4.50 x 6.30 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Pad metall Backside metall Die bond Wire bond Reject ink dot size Recommended storage environment 4.50 x 6.30 28.35 / 20.12 3.546 x 5.346 110 150 180 518 pcs Photoimide 3200 nm AlSiCu Ni Ag -system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, 500m 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C m mm deg mm 2 Edited by INFINEON Technologies, AIM PMD D CID T, L4671B, Edition 0.9, 26.06.07 IDC28D120T6M Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current limited by Tjmax Maximum repetitive forward current limited by Tjmax Maximum junction and storage temperature Reverse bias safe operating area (RBSOA) 1) 2) Symbol VRRM IF IFRM Tvj,max , Ts t g 2) Condition Value 1200 1) Unit V A 100 -40...+175 C I F , m a x = 100A, V R , m a x = 1200V, Tvj,op 150C, P m a x = tbd kW depending on thermal properties of assembly not subject to production test - verified by design/characterisation Static Electrical Characteristics (tested on wafer), Tj=25 C Parameter Reverse leakage current Cathode-Anode breakdown Voltage Forward voltage drop Symbol IR V Br VF Conditions V R = 1 2 00V I R =0. 2 5 mA I F = 50 A Tj= 2 5 C Tj= 2 5 C Tj= 2 5 C 1200 1.35 1.7 2.05 Value min. Typ. max. 10 Unit A V V Dynamic Electrical Characteristics inductive load (not subject to production test - verified by design/characterization) Parameter Peak reverse recovery current Symbol I F= A Conditions T j = 25 C Tj = 125 C Tj = 150 C T j = 25 C Tj = 125 C Tj = 150 C T j = 25 C Tj = 125 C Tj = 150 C Value min. Typ. 2) max. Unit IRM di/dt=A/ s VR = V V GE =- 1 5V I F= A tbd A Reverse recovery charge Qr di/dt=A/ s VR = V V GE =- 1 5V I F= A tbd C Reverse recovery energy E rec di/dt=A/ s VR = V V GE =- 1 5V tbd mJ 2) values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies, AIM PMD D CID T, L4671B, Edition 0.9, 26.06.07 IDC28D120T6M CHIP DRAWING: Edited by INFINEON Technologies, AIM PMD D CID T, L4671B, Edition 0.9, 26.06.07 IDC28D120T6M FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet tbd Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pruffeld Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2007 All Rights Reserved Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM PMD D CID T, L4671B, Edition 0.9, 26.06.07 |
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